5SDF05D2501 Datasheet, PDF (1/5 Pages) The ABB Group – Fast Recovery Diode

V_RRM =
I_FAVM =
I_FSM =
V_F0
=
r_F
=
V_DClink =
2500 V
490 A
8.5×10³ A
1.4 V
0.52 mΩ
1100 V
Fast Recovery Diode
5SDF 05D2501
• Patented free-floating silicon technology
• Low switching losses
• Optimized for use as snubber diode in GTO
converters
• Industry standard press-pack ceramic housing,
hermetically cold-welded
• Cosmic radiation withstand rating
Doc. No. 5SYA1112-03 Jan. 03
Blocking
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Repetetive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Parameter
V_RRM
V_DClink
V_DClink
f = 50 Hz, t_p = 10ms, T_j = 125°C
Ambient cosmic radiation at sea level in open
air. (100% Duty)
Ambient cosmic radiation at sea level in open
air. (5% Duty)
Symbol Conditions
min typ
Repetitive peak reverse current
I_RRM
V_R = V_RRM, Tj = 125°C
Mechanical data
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min typ
Mounting force
Acceleration
F_M
a
Device unclamped
10
11
Acceleration
Characteristic values
Parameter
a
Device clamped
Symbol Conditions
min typ
Weight
m
0.25
Housing thickness
H
26
Pole-piece diameter
D_P
34
Surface creepage distance
D_S
30
Air strike distance
D_a
20
1) Maximum rated values indicate limits beyond which damage to the device may occur
Value
2500
1100
1500
max
50
max
12
50
200
max
Unit
V
V
V
Unit
mA
Unit
kN
m/s²
m/s²
Unit
kg
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.