5SDD60N2800 Datasheet, PDF (1/6 Pages) The ABB Group – Rectifier Diode

V_RSM =
I_F(AV)M =
I_F(RMS) =
I_FSM =
V_F0 =
r_F
=
2800 V
6830 A
10730 A
87×10³ A
0.8 V
0.05 mΩ
Rectifier Diode
5SDD 60N2800
• Patented free-floating silicon technology
• Very low on-state losses
• Optimum power handling capability
Doc. No. 5SYA1155-01 Jan. 05
Blocking
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Repetitive peak reverse voltage
V_RRM
f = 50 Hz, t_p = 10ms, T_j = 160°C
Non - repetitive peak reverse voltage V_RSM f = 5 Hz, t_p = 10ms, T_j = 160°C
Characteristic values
Parameter
Symbol Conditions
min
Max. (reverse) leakage current
I_RRM
V_RRM, Tj = 160°C
Value Unit
2000 V
2800 V
typ max Unit
400 mA
Mechanical data
Maximum rated values ¹⁾
Parameter
Mounting force
Acceleration
Acceleration
Symbol Conditions
F_M
a
Device unclamped
a
Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s²
m/s²
Characteristic values
Parameter
Symbol Conditions
min
typ
Weight
m
Housing thickness
Surface creepage distance
H
F_M = 90 kN, T_a = 25 °C
34.3
D_S
56
Air strike distance
D_a
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
2.8
34.9
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.