5SDD51L2800 Datasheet, PDF (1/6 Pages) The ABB Group – Rectifier Diode

V_RSM =
I_F(AV)M =
I_F(RMS) =
I_FSM =
V_F0 =
r_F
=
2800 V
5380 A
8450 A
65×10³ A
0.77 V
0.082 mΩ
Rectifier Diode
5SDD 51L2800
• Patented free-floating silicon technology
• Very low on-state losses
• High average and surge current.
Doc. No. 5SYA1103-01 Feb. 05
Blocking
Maximum rated values ¹⁾
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Symbol Conditions
V_RRM
f = 50 Hz, t_p = 10ms, T_j = 175°C
V_RSM
f = 5 Hz, t_p = 10ms, T_j = 175°C
V_RSM
f = 50 Hz, t_p ≤ 5ms, T_j = ...175°C
Value Unit
2000 V
2800 V
3000 V
Characteristic values
Parameter
Symbol Conditions
Max. (reverse) leakage current
I_RRM
V_RRM, Tj = 175°C
T_vj = -40°C reduces V_RSM and V_RRM by 5%.
Mechanical data
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Mounting force
F_M
Acceleration
a
Device unclamped
Acceleration
a
Device clamped
min
typ max Unit
400 mA
min
63
typ
70
max
77
50
100
Unit
kN
m/s²
m/s²
Characteristic values
Parameter
Symbol Conditions
min
typ
Weight
m
Housing thickness
H
F_M = 70 kN, T_a = 25 °C
25.7
Surface creepage distance
D_S
35
Air strike distance
D_a
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
1.45
26.3
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.