5SDD38H5000 Datasheet, PDF (1/6 Pages) The ABB Group – Rectifier Diode

V_RSM =
I_F(AV)M =
I_F(RMS) =
I_FSM =
V_F0 =
r_F
=
5000 V
3810 A
5990 A
45×10³ A
0.903 V
0.136 mΩ
Rectifier Diode
5SDD 38H5000
• Optimum power handling capability
• Very low on-state losses
Doc. No. 5SYA1177-00 Feb. 06
Blocking
Maximum rated values ^{Note 1}
Parameter
Symbol Conditions
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Characteristic values
Parameter
V_RRM
V_RSM
f = 50 Hz, t_p = 10ms, T_j = -40...160°C
f = 50 Hz, t_p = 10ms, T_j = -40...160°C
Symbol Conditions
min
typ
Max. (reverse) leakage current
I_RRM
Derating factor of 0.13% per °C is applicable for Tj below 0 °C.
V_RRM, Tj = 160°C
Mechanical data
Maximum rated values ^{Note 1}
Parameter
Symbol Conditions
min
typ
Mounting force
Acceleration
F_M
a
Device unclamped
45
50
Acceleration
a
Device clamped
Value Unit
5000 V
5000 V
max Unit
110 mA
max
55
50
100
Unit
kN
m/s²
m/s²
Characteristic values
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H
F_M = 50 kN, T_a = 25 °C
D_S
D_a
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
min
25.5
40
20
typ
0.9
max
26.5
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.