5SDD24F2800 Datasheet, PDF (1/5 Pages) The ABB Group – Rectifier Diode

V_RSM =
I_FAVM =
I_FRMS =
I_FSM =
V_F0 =
r_F
=
3000 V
2596 A
4078 A
30×10³ A
0.906 V
0.135 mΩ
Rectifier Diode
5SDD 24F2800
• Very low on-state losses
• Optimum power handling capability
Doc. No. 5SYA1167-00 Jan. 03
Blocking
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Repetetive peak reverse voltage
V_RRM
f = 50 Hz, t_p = 10ms, T_j = -40...160°C
Non - repetetive peak reverse voltage V_RSM
f = 5 Hz, t_p = 10ms, T_j = -40...160°C
Characteristic values
Parameter
Symbol Conditions
min
typ
Max. (reverse) leakage current
I_RRM
V_RRM, Tj = 160°C
Value Unit
2800 V
3000 V
max
50
Unit
mA
Mechanical data
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min
typ
Mounting force
Acceleration
F_M
a
Device unclamped
20
22
Acceleration
Characteristic values
Parameter
a
Device clamped
Symbol Conditions
min
typ
Weight
m
0.5
Housing thickness
H
26
Pole-piece diameter
D_P
47
Surface creepage distance
D_S
33
Air strike distance
D_a
18
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
24
50
100
max
Unit
kN
m/s²
m/s²
Unit
kg
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.