5SDD11D2800 Datasheet, PDF (1/6 Pages) The ABB Group – Rectifier Diode

V_RSM =
I_F(AV)M =
I_F(RMS) =
I_FSM =
V_F0 =
r_F
=
3000 V
1285 A
2019 A
15×10³ A
0.933 V
0.242 mΩ
Rectifier Diode
5SDD 11D2800
• Very low on-state losses
• Optimum power handling capability
Doc. No. 5SYA1166-00 Okt. 03
Blocking
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Repetetive peak reverse voltage
V_RRM
f = 50 Hz, t_p = 10ms, T_j = -40...160°C
Non - repetetive peak reverse voltage V_RSM f = 5 Hz, t_p = 10ms, T_j = -40...160°C
Characteristic values
Parameter
Max. (reverse) leakage current
Symbol Conditions
I_RRM
V_RRM, Tj = 160°C
min
typ
Value Unit
2800 V
3000 V
max
30
Unit
mA
Mechanical data
Maximum rated values ¹⁾
Parameter
Mounting force
Acceleration
Acceleration
Symbol Conditions
F_M
a
Device unclamped
a
Device clamped
min
8
typ
10
max
12
50
100
Unit
kN
m/s²
m/s²
Characteristic values
Parameter
Symbol Conditions
min
typ
Weight
m
0.3
Housing thickness
H
F_M = 10 kN, T_a = 25 °C
25.5
Surface creepage distance
D_S
33
Air strike distance
D_a
18
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
26.5
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.