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AAT7357 Datasheet, PDF (2/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET
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AAT7357
20V P-Channel Power MOSFET
Electrical Characteristics
TJ = 25°C, unless otherwise noted.
Symbol Description
Conditions
DC Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA
RDS(ON) Drain-Source On-Resistance1
VGS = -4.5V, ID = -5A
VGS = -2.5V, ID = -4A
ID(ON) On-State Drain Current1
VGS = -4.5V, VDS = -5V (pulsed)
VGS(th) Gate Threshold Voltage
VGS = VDS, ID = -250µA
IGSS Gate-Body Leakage Current
VGS = ±12V, VDS = 0V
IDSS
Drain-Source Leakage Current
VGS = 0V, VDS = -20V
VGS = 0V, VDS = -16V, TJ = 70°C2
gfs
Forward Transconductance1
VDS = -5V, ID = -5A
Dynamic Characteristics2
QG
Total Gate Charge
QGS Gate-Source Charge
QGD Gate-Drain Charge
tD(ON) Turn-On Delay
tR
Turn-On Rise Time
tD(OFF) Turn-Off Delay
tF
Turn-Off Fall Time
Source-Drain Diode Characteristics
VDS = -10V, RD = 2.0Ω, VGS = -4.5V
VDS = -10V, RD = 2.0Ω, VGS = -4.5V
VDS = -10V, RD = 2.0Ω, VGS = -4.5V
VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω
VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω
VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω
VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω
VSD Source-Drain Forward Voltage1 VGS = 0, IS = -5A
IS
Continuous Diode Current3
Min
-20
-12
-0.6
Typ
30
49
12
14
3.5
5.6
12
20
33
40
Max
39
63
±100
-1
-5
-1.2
-1.3
Units
V
mΩ
A
V
nA
µA
S
nC
ns
V
A
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
7357.2005.04.1.0
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