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AAT3680 Datasheet, PDF (14/18 Pages) Advanced Analogic Technologies – Lithium-Ion Linear Battery Charge Controller
with a P-channel MOSFET. If there is no other pro-
tection in the system, a shorted input could dis-
charge the battery through the body diode of the
pass MOSFET. If a reverse-blocking diode is
added to the system, a device should be chosen
which can withstand the maximum constant cur-
rent charge current at the maximum system ambi-
ent temperature.
Diode Selection
Typically, a Schottky diode is used in reverse current
blocking applications with the AAT3680. Other
lower cost rectifier type diodes may also be used if
sufficient input power supply headroom is available.
The blocking diode selection should based on mer-
its of the device forward voltage (VF), current rat-
ing, and input supply level versus the maximum
battery charge voltage and cost.
First, determine the minimum diode forward voltage
drop requirement. Refer to the following equation:
VIN(MIN) = VBAT(MAX) + VF(TRAN) + VF(DIODE)
Where:
VIN(MIN) = Minimum input supply level
VBAT(MAX) = Maximum battery charge
required
voltage
VF(TRAN) = Pass transistor forward voltage drop
VF(DIODE) = Blocking diode forward voltage
Based on the maximum constant current charge
level set for the system, the next step is to deter-
mine the minimum current rating and power han-
dling capacity for the blocking diode. The constant-
current charge level itself will dictate what the mini-
mum current rating must be for a given blocking
diode. The minimum power handling capacity must
be calculated based on the constant current ampli-
tude and the diode forward voltage (VF):
PD(MIN) =
VF
ICC
AAT3680
Lithium-Ion/Polymer
Linear Battery Charge Controller
Where:
PD(MIN) = Minimum power rating for a diode selection
VF = Diode forward voltage
ICC = Constant current charge level for the
system
Schottky Diodes
Schottky diodes are selected for this application
because they have a low forward voltage drop, typ-
ically between 0.3V and 0.4V. A lower VF permits
a lower voltage drop at the constant current charge
level set by the system; less power will be dissi-
pated in this element of the circuit. Schottky
diodes allow for lower power dissipation, smaller
component package sizes, and greater circuit lay-
out densities.
Rectifier Diodes
Any general-purpose rectifier diode can be used
with the AAT3680 application circuit in place of a
higher cost Schottky diode. The design trade-off is
that a rectifier diode has a high forward voltage
drop. VF for a typical silicon rectifier diode is in the
range of 0.7V. A higher VF will place an input sup-
ply voltage requirement for the battery charger sys-
tem. This will also require a higher power rated
diode since the voltage drop at the constant current
charge amplitude will be greater. Refer to the pre-
viously stated equations to calculate the minimum
VIN and diode PD for a given application.
PCB Layout
For the best results, it is recommended to physical-
ly place the battery pack as closely as possible to
the AAT3680's BAT pin. To minimize voltage drops
in the PCB, keep the high current carrying traces
adequately wide. For maximum power dissipation
in the pass transistor, it is critical to provide enough
copper to spread the heat. Refer to the AAT3680
demo board PCB layout in Figures 8, 9, and 10.
14
3680.2006.03.1.6