AP4531GH Datasheet, PDF (7/8 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Good Thermal Performance

P-Channel
12
10
I _D = -4 A
V _DS = -32 V
8
6
4
2
0
0
4
8
12
16
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1
0.1
T _A =25 ^o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
20
V _DS =-5V
16
T _j =25 ^o C
12
T _j =150 ^o C
8
4
0
0
2
4
6
8
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
AP4531GH
f=1.0MHz
10000
1000
C _iss
100
C _oss
C _rss
10
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.0001
0.001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja=75℃/W
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_G
Q_G
-4.5V
Q_GS
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
7/7