AP9934GM Datasheet, PDF (6/7 Pages) Advanced Power Electronics Corp. – 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9934GM
P-Channel
21
18
T _A =25 ^o C
15
12
-10V
-7.0V
-5.0V
-4.5V
9
V _G = - 2.5V
6
3
0
0
1
2
3
4
5
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
I _D = -2 A
90
T _A =25 ^o C
80
70
60
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
2
T _j =150 ^o C
T _j =25 ^o C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
21
18
T _A = 150 ^o C
15
12
-10V
-7.0V
-5.0V
-4.5V
9
6
V _G = - 2.5V
3
0
0
1
2
3
4
5
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D = -3 A
1.4
V _G = - 10V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.5
1
0.5
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature