AP4530GM Datasheet, PDF (5/8 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Fast Switching Performance

N-Channel
12
8
I_D=5A
V _DS = 30 V
4
AP4530GM
f=1.0MHz
1000
C _iss
100
C _oss
C _rss
0
0
3
6
9
12
15
18
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
10ms
1
100ms
0.1
1s
T _A =25 ^o C
Single Pulse
DC
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
30
V _DS =5V
T _j =25 ^o C
T _j =150 ^o C
20
10
0
0
2
4
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135^oC/W
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
10
100
Fig 10. Effective Transient Thermal Impedance
V_G
Q_G
4.5V
Q_GS
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
5