AP9997GM_16 Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP9997GM
12
I _D =3A
10
8
V _DS =80V
6
4
2
0
0
4
8
12
16
20
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
100
Coss
Crss
10
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
1
10
Operation in this
area limited by
RDS(ON)
1
100us
1ms
10ms
0.1
100ms
1s
0.01
DC
T _A =25 ^o C
Single Pulse
0.001
0.1
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
DUTY=0.5
0.2
0.1
0.1
.
0.05
0.02
0.01
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
0.01
0.001
Single Pulse
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
5
V _DS =5V
4
T _j =25 ^o C
T _j =150 ^o C
3
2
1
0
0
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
V_G
10V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4