AP9979GJ Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9979GH/J
14
I _D = 13 A
12
10
V _DS = 30 V
V _DS =38V
8
V _DS = 48 V
6
4
2
0
0
10
20
30
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
1
T _C =25 ^o C
Single Pulse
10ms
100ms
DC
0.1
0.1
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
30
V _DS =5V
20
T _j =25 ^o C
T _j =150 ^o C
10
0
0
2
4
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
1000
C _iss
100
C _oss
C _rss
10
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4