AP9936GM-HF_14 Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Dual N-channel Device

AP9936GM-HF
12
10
8
6
4
2
0
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig7. Gate Charge Characteristics
100
10
1
1ms
10ms
0.1
T _A =25 ^o C
Single Pulse
100ms
1s
DC
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
V_DS
90%
t_d(on)
10%
V_GS
t_r
t_{d(off) tf}
Fig 11. Switching Time Waveform
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1
8
15
22
29
V _DS , Drain-to-Source Voltage (V)
Fig 8 . Typical Capacitance Characteristics
1
0.1
0.01
Duty Factor = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135^oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig10. Effective Transient Thermal Impedance
V_G
5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4