AP9581GP-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9581GP-HF
10
V _DS = - 64 V
I _D = - 30 A
8
6
4
2
0
0
40
80
120
160
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
10000
8000
C _iss
6000
4000
2000
0
1
C _oss
C _rss
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
Operation in this
area limited by
100
RDS(ON)
100us
1ms
10
T _c =25 ^o C
Single Pulse
10ms
100ms
DC
1
0.1
1
10
100
1000
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
100
80
60
40
20
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4