AP9561AGI-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9561AGI-HF
10
V _DS = -32V
I _D = -20A
8
6
4
2
0
0
10
20
30
40
50
60
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
4000
3000
C _iss
2000
1000
C _oss
C _rss
0
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100
Operation in this area
limited by RDS(ON)
100us
10
1ms
1
T _C =25 ^o C
Single Pulse
10ms
100ms
1s
DC
0.1
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
40
80
V _DS = -5V
T _j =25 ^o C
T _j =150 ^o C
30
60
20
40
10
20
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
0
0
1
2
3
4
5
6
-V _GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4