AP9466GH Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9466GH/J
14
I _D =26A
12
10
V _DS =20V
8
V _DS =24V
V _DS =32V
6
4
2
0
0
5
10
15
20
25
30
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
10
1
T _C =25 ^o C
Single Pulse
10us
100us
1ms
10ms
100ms
DC
0.1
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off) t_f
f=1.0MHz
10000
1000
Ciss
Coss
Crss
100
10
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4