AP9465BGH Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9465BGH/J
16
I _D =12A
12
V _DS =20V
V _DS =24V
V _DS =32V
8
4
0
0
4
8
12
16
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1
T _C =25 ^o C
Single Pulse
1ms
10ms
100ms
DC
0
0.1
1
10
100
V _DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
40
V _DS =5V
30
20
T _j =25 ^o C
T _j =150 ^o C
10
0
0
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
1000
C _iss
100
C _oss
C _rss
10
1
5
9
13
17
21
25
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4