AP9430GYT-HF_16 Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP9430GYT-HF
10
I _D = 20 A
V _DS =15V
8
6
4
2
0
0
10
20
30
40
50
60
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
4000
3000
C _iss
2000
1000
C _oss
C _rss
0
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1ms
10ms
1
100ms
1s
0.1
T _A =25 ^o C
DC
Single Pulse
0.01
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
.
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=85 ℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_{d(off) tf}
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4