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AP9414GM Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, Simple Drive Requirement
AP9414GM
10
I D = 15 A
8
V DS = 15 V
V DS = 18 V
6
V DS = 24 V
4
2
0
0
10
20
30
40
50
60
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
DC
Single Pulse
0.01
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
f=1.0MHz
4000
3000
C iss
2000
1000
0
1
C oss
C rss
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4