AP9408AGP Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement

AP9408AGP
8
I _D = 20 A
6
V _DS = 15 V
V _DS = 18 V
V _DS = 24 V
4
2
0
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
1000
800
600
C _iss
400
200
C _oss
C _rss
0
1
5
9
13
17
21
25
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100
100us
10
T _C =25 ^o C
Single Pulse
1ms
10ms
100ms
DC
1
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off) t_f
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4