AP9120AGH-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9120AGH-HF
12
I _D = -5A
V _DS = -160V
10
8
6
4
2
0
0
10
20
30
40
50
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
2000
f=1.0MHz
1600
1200
C _iss
800
400
C _oss
0
C _rss
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1ms
1
T _C =25 ^o C
Single Pulse
10ms
100ms
DC
0.1
1
10
100
1000
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
10
V _DS = -5V
8
T _j =25 ^o C
6
4
T _j =150 ^o C
2
0
0
2
4
6
8
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
8
6
4
2
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4