AP83T03GM-HF_16 Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP83T03GM-HF
8
V _DS = 15 V
I _D = 12 A
6
4
2
0
0
5
10
15
20
25
30
35
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
2000
1600
C _iss
1200
800
400
C _oss
C _rss
0
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1ms
10ms
1
100ms
1s
0.1
T _A =25 ^o C
Single Pulse
DC
0.01
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
.
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125^oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
100
V _DS =5V
80
60
40
T _j =150 ^o C
20
T _j =25 ^o C
T _j = -40 ^o C
0
0
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
20
16
12
8
4
0
25
50
75
100
125
150
T _A , Ambient Temperature ( ^o C )
Fig 12. Drain Current v.s. Ambient
Temperature
4