AP83T03AGMT-HF_16 Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP83T03AGMT-HF
10
I _D = 20 A
V _DS =15V
8
6
4
2
0
0
4
8
12
16
20
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
Operation in this area
100
limited by RDS(ON)
100us
1ms
10
T _C =25 ^o C
Single Pulse
10ms
100ms
DC
1
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
80
V _DS =5V
60
f=1.0MHz
2000
1600
1200
C _iss
800
400
C _oss
C _rss
0
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
80
60
40
T _j =150 ^o C
20
T _j =25 ^o C
T _j = -40 ^o C
0
0
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
40
20
0
25
50
75
100
125
T _C , Case Temperature ( ^o C )
Fig 12. Drain Current v.s. Case
Temperature
150
4