AP73T03GH-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP73T03GH/J-HF
10
I _D =30A
8
V _DS =15V
V _DS =18V
6
V _DS =24V
4
2
0
0
4
8
12
16
20
24
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100 _{Operation in this area}
limited by RDS(ON)
100us
10
1ms
T _C =25 ^o C
Single Pulse
1
0.1
1
10ms
100ms
DC
10
100
V _DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
f=1.0MHz
1000
800
C _iss
600
400
200
C _oss
C _rss
0
1
5
9
13
17
21
25
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
+20^0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off) t_f
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4