AP70T15GP-HF_14 Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP70T15GP-HF
12
I _D = 30 A
10
8
V _DS =75V
V _DS =90V
V _DS =120V
6
4
2
0
0
40
80
120
160
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
Operation in this area
limited by RDS(ON)
100us
10
1ms
1
T _c =25 ^o C
Single Pulse
10ms
100ms
DC
0.1
0.1
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
160
V _DS =5V
120
80
T _j =25 ^o C
T _j =150 ^o C
40
0
0
2
4
6
8
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
8000
C _iss
6000
4000
2000
C _oss
0
1
5
9
13
17
21
C _{25 rss 29}
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
60
50
40
30
20
10
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 12. Maximum Continuous Drain
Current v.s. Case Temperature
4