AP70SL950AJB Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP70SL950AJB
12
I _D =2.2A
10 ^{V DS =480V}
8
6
4
2
0
0
4
8
12
16
20
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
10000
1000
C _iss
0.37Ω
100
C _oss
10
C _rss
1
0.1
0
200
400
600
800
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
1
10
Operation in this area
limited by RDS(ON)
1
10us
100us
.
0.1
1ms
10ms
0.01
DC
T _C =25 ^o C
Single Pulse
0.001
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off) t_f
V_G
10V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4