AP6683GYT-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP6683GYT-HF
8
I _D = -10 A
V _DS = -15 V
6
4
2
0
0
10
20
30
40
50
60
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this area
limited by RDS(ON)
10
1
100us
1ms
10ms
100ms
0.1
1s
T _A =25 ^o C
Single Pulse
DC
0.01
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
80
V _DS = -5V
60
f=1.0MHz
3500
3000
2500
C _iss
2000
1500
1000
500
C _oss
C _rss
0
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=210 ℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
16
12
40
T _j =150 ^o C
20
T _j =25 ^o C
T _j = -40 ^o C
0
0
1
2
3
4
5
6
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
4
0
25
50
75
100
125
150
T _A , Ambient Temperature ( ^o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4