AP6680BGYT-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Small Size & Lower Profile

AP6680BGYT-HF
10
I _D = 12 A
V _DS =15V
8
6
4
2
0
0
5
10
15
20
25
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
1200
C _iss
1000
800
600
400
C _oss
200
C _rss
0
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1
0.1
T _A =25 ^o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.01
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
Single Pulse
0.001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=85 ℃/W
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
60
V _DS =5V
50
T _j =25 ^o C
T _j =150 ^o C
40
30
20
10
0
0
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4