AP6679GM-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low On-resistance

AP6679GM-HF
10
I _D = - 14 A
V _DS = -24V
8
6
4
2
0
0
20
40
60
80
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1ms
10ms
1
100ms
1s
0.1
T _A =25 ^o C
DC
Single Pulse
0.01
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 7. Maximum Safe Operating Area
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off)t_f
Fig 11. Switching Time Waveform
f=1.0MHz
10000
Ciss
1000
Coss
Crss
100
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance Characteristics
1
0.1
0.01
Duty factor=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125^oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 8. Effective Transient Thermal Impedance
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4