AP6679BGI-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, Simple Drive Requirement

AP6679BGI-HF
10
8
V _DS =-24V
I _D =-30A
6
4
2
0
0
20
40
60
80
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
5000
4000
C _iss
3000
2000
1000
C _oss
C _rss
0
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
Operation in this
100
area limited by
RDS(ON)
100us
1ms
10
T _C =25 ^o C
Single Pulse
1
0.1
1
10ms
100ms
1s
DC
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
60
50
40
30
20
10
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4