AP60N2R5H Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP60N2R5H
12
I _D =1.4A
10 ^{V DS =480V}
8
6
4
2
0
0
4
8
12
16
20
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
1000
800
0.37Ω ^{C iss}
600
400
200
C _oss
0
C _rss
0
100
200
300
400
500
600
700
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
1
10
Operation in this area
limited by RDS(ON)
10us
100us
1
1ms
.
10ms
100ms
0.1
DC
T _C =25 ^o C
Single Pulse
0.01
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
60
50
40
30
20
10
0
0
50
100
150
T _C , Case Temperature ( ^o C )
Fig 11. Total Power Dissipation
2
I _D =1mA
1.6
1.2
0.8
0.4
0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 12. Normalized BVDSS v.s. Junction
Temperature
4