AP55T10GI-HF_14 Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP55T10GI-HF
12
I _D = 24 A
V _DS =80V
10
8
6
4
2
0
0
30
60
90
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
5000
4000
C _iss
3000
2000
1000
0
1
C _oss
C _rss
5
9
13
17
21
25
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100
Operation in this area
limited by RDS(ON)
10us
100us
10
1ms
10ms
100ms
1
T _c =25 ^o C
Single Pulse
1s
DC
0.1
0.01
0.1
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
40
V_G
30
Q_G
10V
20
Q_GS
Q_GD
10
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Charge
Q
Fig 12. Gate Charge Waveform
4