AP55T06GI-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP55T06GI-HF
10
I _D =18A
V _DS =80V
8
6
4
2
0
0
10
20
30
40
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
Operation in this
area limited by
RDS(ON)
100us
10
1
T _C =25 ^o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.1
0.01
0.1
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
32
24
f=1.0MHz
1600
1200
C _iss
800
400
C _oss
C _rss
0
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
80
V _DS =5V
60
16
8
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
40
T _j =150 ^o C
20
T _j =25 ^o C
T _j = -40 ^o C
0
0
2
4
6
8
V _GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4