AP50T10GI-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP50T10GI-HF
12
I _D =16A
V _DS =80V
10
8
6
4
2
0
0
10
20
30
40
50
60
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
3000
2000
C _iss
1000
C _oss
0
C _rss
1
5
9
13
17
21
25
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100
Operation in this
area limited by
RDS(ON)
10
100us
1
T _c =25 ^o C
Single Pulse
1ms
10ms
100ms
DC
0.1
0.1
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
24
20
16
12
8
4
0
25
50
75
100
125
150
175
T _C , Case Temperature ( ^o C )
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
V_G
10V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4