AP4951GM-HF_16 Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

AP4951GM-HF
12
I _D = -3A
V _DS = -48V
10
8
6
4
2
0
0
10
20
30
40
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1
T _A =25 ^o C
1s
Single Pulse
DC
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
20
V _DS = -5V
16
T _j =25 ^o C
T _j =150 ^o C
12
8
4
0
0
2
4
6
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
C _iss
1000
C _oss
100
C _rss
10
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135^oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_G
-10V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4