AP4575GM Datasheet, PDF (4/7 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4575GM
N-Channel
60
T _A = 25 ^o C
50
40
10V
7.0V
5.0V
4.5V
30
20
V _G =3.0V
10
0
0
1
2
3
4
5
6
7
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
38
I_D=3A
36
T _A =25 ^o C
34
32
30
28
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
4
3
T _j =150 ^o C
2
T _j =25 ^o C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
50
T_A=150^oC
40
30
10V
7.0V
5.0V
4.5V
20
V _G =3.0V
10
0
0
1
2
3
4
5
6
7
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
1.6
I _D =5A
V _G =10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.3
1.1
0.9
0.7
0.5
0.3
-50
0
50
100
150
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature