AP4569GH Datasheet, PDF (4/7 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4569GH
N-Channel
30
T _C =25 ^o C
20
10V
7.0V
5.0V
4.5V
10
V _G =3.0V
0
0
2
4
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
150
I _D =4A
T _C =25 ^o C
110
70
30
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
T _j =150 ^o C
T _j =25 ^o C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
30
T _C = 150 ^o C
10V
7.0V
20
5.0V
4.5V
10
V _G =3.0V
0
0
2
4
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =6A
V _G =10V
1.4
1.0
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.1
0.7
0.3
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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