AP4417GJ_14 Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP4417GH/J
12
V _DS =-30V
I _D =-8A
8
4
f=1.0MHz
1000
C _iss
100
C _oss
C _rss
0
0
2
4
6
8
10
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
10
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100.0
100us
10.0
1ms
1.0
T _c =25 ^o C
Single Pulse
10ms
100ms
DC
0.1
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
30
V _DS =-5V
20
T _j =25 ^o C
T _j =150 ^o C
10
V_G
-4.5V
Q_GS
Q_G
Q_GD
0
0
2
4
6
8
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Charge
Q
Fig 12. Gate Charge Waveform
4