AP2611GY-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2611GY-HF
10
I _D = -1.4A
V _DS = -50V
8
6
4
2
0
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
800
600
65mΩ
400
C _iss
200
C _oss
0
C _rss
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
10
Operation in this
area limited by RDS(ON)
1
100us
1ms
10ms
0.1
100ms
1s
0.01
DC
T _A =25 ^o C
Single Pulse
0.001
0.1
1
10
100
1000
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.01
0.01
Single Pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 156℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
2
1.6
1.2
0.8
0.4
0
25
50
75
100
125
150
T _A , Ambient Temperature ( ^o C )
Fig 11. Maximum Continuous Drain Current
v.s. Ambient Temperature
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4