AP2430GN3-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Bottom Exposed DFN, Low On-resistance

AP2430GN3-HF
10
I _D =10A
V _DS =15V
8
6
4
2
0
0
8
16
24
32
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this
area limited by
10
RDS(ON)
100us
1ms
1
10ms
0.1
T _A =25 ^o C
Single Pulse
100ms
1s
DC
0.01
0.01
0.1
1
10
100
V _DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
50
V _DS =5V
40
30
20
10
T _j =150 ^o C
T _j =25 ^o C
T _j =-40 ^o C
0
0
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
1600
1200
C _iss
800
400
C _oss
C _rss
0
1
5
9
13
17
21
25
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
0.001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=100^oC/W
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
16
12
8
4
0
25
50
75
100
125
150
T _A , Ambient Temperature ( ^o C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4