AP2323GN-HF_14 Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Small Package Outline

AP2323GN-HF
6
I _D = -4A
V _DS = -10V
5
4
3
2
1
0
0
4
8
12
16
20
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
0.1
T _A =25 ^o C
1s
Single Pulse
DC
0.01
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
20
V _DS = -5V
16
12
8
T _j =150 ^o C
4
T _j =25 ^o C
T _j = -40 ^o C
0
0
1
2
3
4
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
2000
1600
65mΩ
1200
C _iss
800
400
C _oss
C _rss
0
1
5
9
13
17
21
25
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
6
5
4
3
2
1
0
25
50
75
100
125
150
T _A , Ambient Temperature ( ^o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4