AP2315GEN_16 Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP2315GEN
10
8
I _D = -0.8A
6
V _DS = -25V
4
2
0
0
0.5
1
1.5
2
2.5
3
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
100
65mΩ
C _iss
C _oss
C _rss
10
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
10
Operation in this area
1
limited by RDS(ON)
100us
1ms
10ms
0.1
100ms
T _A =25 ^o C
Single Pulse
0.01
0.1
1
1s
DC
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
.
0.1
0.05
0.02
0.01
Single pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 400℃/W
0.01
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
1.0
V _DS = -5V
0.8
0.6
T _j =25 ^o C
T _j =150 ^o C
0.4
0.2
0.0
0
2
4
6
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4