AP2302N-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2302N-HF
8
I _D =3A
V _DS =10V
6
4
2
0
0
2
4
6
8
10
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
500
400
300
C _iss
200
100
C _oss
C _rss
0
1
5
9
13
17
21
25
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
Operation in this
area limited by
RDS(ON)
100us
1
1ms
0.1
0.01
0.01
10ms
T _A =25 ^o C
Single Pulse
100ms
1s
DC
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 350℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
5
4
3
2
1
0
25
50
75
100
125
150
T _A , Ambient Temperature ( ^o C )
Fig 11. Maximum Continuous Drain Current
v.s. Ambient Temperature
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4