AP15TP1R0Y Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – Small Footprint & Low Profile Package

AP15TP1R0Y
12
I _D = -1 A
10 ^{V DS = -75 V}
8
6
4
2
0
0
4
8
12
16
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
800
600
C _iss
400
200
C _oss
C _rss
0
0
40
80
120
160
200
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
10
Operation in this area
1
limited by RDS(ON)
0.1
100us
1ms
10ms
100ms
1s
0.01
T _A =25 ^o C
DC
Single Pulse
0.001
0.1
1
10
100
1000
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
.
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=156 ℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
10
V _DS = -10V
8
6
4
T _j =150 ^o C
2
T _j =25 ^o C
T _j = -55 ^o C
0
0
1
2
3
4
5
6
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
1.6
1.2
0.8
0.4
0
25
50
75
100
125
150
T _A , Ambient Temperature ( ^o C )
Fig 12. Drain Current v.s. Ambient
Temperature
4