APS04N60H-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

8
T _C =25 ^o C
6
4
2
10V
8.0V
7.0V
6.0V
V _G =5.0V
0
0
4
8
12
16
20
24
28
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 3. Normalized BV_DSS v.s. Junction
Temperature
8
6
T _j = 150 ^o C
4
T _j = 25 ^o C
2
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
APS04N60H-HF
5
T _C =150 ^o C
4
3
10V
8.0V
7.0V
6.0V
V _G =5.0V
2
1
0
0
4
8
12
16
20
24
28
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I _D =2A
V _G =10V
2
1
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3