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AP9997AGH-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
24
T C = 25 o C
20
16
10V
8.0V
7.0V
6.0V
12
5.0V
8
4
V G = 3.0V
0
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
200
I D =8A
T C =25 o C
190
180
170
160
150
4
5
6
7
8
9
10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T j =150 o C
T j =25 o C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9997AGH-HF
16
T C = 150 o C
12
8
10V
8.0V
7.0V
6.0V
5.0V
4
V G = 3.0 V
0
0
4
8
12
16
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =8A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3