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AP9980GM-HF_16 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
70
60 T A =25 o C
50
40
10V
7.0V
5.0V
4.5V
30
20
V G =3.0V
10
0
0
2
4
6
8
10
8.012V
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
55
I D =3.6A
T A =25 o C
50
45
40
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
2
T j =150 o C
1
T j =25 o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9980GM-HF
50
T A =150 o C
40
30
10V
7.0V
5.0V
4.5V
20
V G =3.0V
10
0
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.3
I D = 4.6 A
V G =10V
1.8
1.3
0.8
0.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
2.5
2
1.5
1
0.5
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3