AP9971GM Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

35
T _A =25 ^o C
30
25
10V
6.0V
4.5V
20
15
10
V _G =3.0V
5
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
55
I _D =5A
50
T _A =25 ^o C
45
40
35
30
1
2
3
4
5
6
7
8
9
10
11
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T _j =150 ^o C
1
T _j =25 ^o C
0.1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9971GM
35
30
T _A =150 ^o C
25
10V
6.0V
4.5V
20
15
10
V _G =3.0V
5
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I _D =5A
V _G =10V
2.0
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.8
2.4
2
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3