AP9962H Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE

140
120
T _C =25 ^o C
10V
8.0V
100
6.0V
80
60
4.5V
40
20
V _G =3.0V
0
0
1
2
3
4
5
6
7
8
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
36
I _D =20A
32
T _C =25 ^o C
28
24
20
16
12
3
4
5
6
7
8
9
10
11
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
25
20
15
T _j =150 ^o C
10
T _j =25 ^o C
5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9962H/J
120
T _C =150 ^o C
100
80
60
40
10V
8.0V
6.0V
4.5V
20
V _G =3.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
1.6
I _D =20A
V _G =10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature